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Other articles related with "surface treatment"：
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37201 |
Lei Wang(王磊), Jiaqi Zhang(张家琦), Liuan Li(李柳暗), Yutaro Maeda(前田裕太郎), Jin-Ping Ao(敖金平) |
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Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (3): 37201-037201
[Abstract]
(686)
[HTML 1 KB]
[PDF 311 KB]
(338)
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108505 |
Chang-Ting Wei(魏昌庭), Jin-Yong Zhuang(庄锦勇), Ya-Li Chen(陈雅丽), Dong-Yu Zhang(张东煜), Wen-Ming Su(苏文明), Zheng Cui(崔铮) |
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Surface treatment on polyethylenimine interlayer to improve inverted OLED performance |
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Chin. Phys. B
2016 Vol.25 (10): 108505-108505
[Abstract]
(675)
[HTML 1 KB]
[PDF 1102 KB]
(557)
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68401 |
Wan-Zhao Cui(崔万照), Yun Li(李韵), Jing Yang(杨晶), Tian-Cun Hu(胡天存), Xin-Bo Wang(王新波), Rui Wang(王瑞), Na Zhang(张娜), Hong-Tai Zhang(张洪太), Yong-Ning He(贺永宁) |
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An efficient multipaction suppression method in microwave components for space application |
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Chin. Phys. B
2016 Vol.25 (6): 68401-068401
[Abstract]
(574)
[HTML 1 KB]
[PDF 1630 KB]
(297)
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17307 |
Wang Liang-Ji(王良吉), Zhang Shu-Ming(张书明), Zhu Ji-Hong(朱继红), Zhu Jian-Jun(朱建军), Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), Wang Yu-Tian(王玉田) , and Yang Hui(杨辉) |
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Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices |
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Chin. Phys. B
2010 Vol.19 (1): 17307-017307
[Abstract]
(1480)
[HTML 1 KB]
[PDF 689 KB]
(1195)
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529 |
Xu Jing-Ping(徐静平), Chen Wei-Bing(陈卫兵), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), and Chan Chu-Lok(陈铸略) |
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Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment |
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Chin. Phys. B
2007 Vol.16 (2): 529-532
[Abstract]
(1454)
[HTML 1 KB]
[PDF 147 KB]
(497)
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